SCT4026DW7HRTL
750V, 51A, 7-PIN SMD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor SCT4026DW7HRTL is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 750V and a continuous drain current (Id) of 51A at 25°C (Tc), with a maximum power dissipation of 150W. The low on-resistance (Rds On) of 34mOhm is achieved at 29A and 18V gate-source voltage. The SCT4026DW7HRTL offers a high operating temperature of 175°C (TJ) and is housed in a TO-263-7L surface mount package. Key parameters include input capacitance (Ciss) of 2320pF at 500V and gate charge (Qg) of 94nC at 18V. This component is AEC-Q101 qualified and suitable for automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 150W |
| Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |
| Supplier Device Package | TO-263-7L |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
| Qualification | AEC-Q101 |
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