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SCT4026DRHRC15

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SCT4026DRHRC15

750V, 56A, 4-PIN THD, TRENCH-STR

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor SCT4026DRHRC15 is a 750V N-Channel SiCFET with a continuous drain current rating of 56A (Tc) and a maximum power dissipation of 176W. This component features a low on-resistance of 34mOhm @ 29A, 18V, and a gate charge of 94nC @ 18V. Designed for high-performance applications, it operates at junction temperatures up to 175°C and is qualified to AEC-Q101 for automotive applications. The SCT4026DRHRC15 is packaged in a TO-247-4L through-hole configuration with a 4-pin THD, TRENCH-STR construction. This device is suitable for demanding power conversion circuits in sectors such as automotive, industrial power supplies, and energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 29A, 18V
FET Feature-
Power Dissipation (Max)176W
Vgs(th) (Max) @ Id4.8V @ 15.4mA
Supplier Device PackageTO-247-4L
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+21V, -4V
Drain to Source Voltage (Vdss)750 V
Gate Charge (Qg) (Max) @ Vgs94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2320 pF @ 500 V
QualificationAEC-Q101

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