SCT4026DRC15
750V, 26M, 4-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT4026DRC15 is a high-performance N-Channel SiCFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 750 V and a continuous drain current (Id) of 56A (Tc) at 25°C, with a maximum power dissipation of 176W. The device exhibits a low on-resistance (Rds On) of 34mOhm at 29A and 18V gate drive. Key parameters include a gate charge (Qg) of 94 nC at 18V and input capacitance (Ciss) of 2320 pF at 500V. It operates across a temperature range of -55°C to 175°C (TJ) and is supplied in a TO-247-4L package. This SiCFET is suitable for various industrial power conversion systems, including electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 176W |
| Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
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