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SCT4026DEHRC11

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SCT4026DEHRC11

750V, 56A, 3-PIN THD, TRENCH-STR

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT4026DEHRC11 is an N-Channel SiCFET MOSFET designed for high-performance applications. This component features a 750 V drain-source voltage and a continuous drain current of 56 A at 25°C (Tc). The device offers a low on-resistance of 34 mOhm at 29 A and 18 V, with a gate charge of 94 nC at 18 V. With a maximum power dissipation of 176 W and an operating junction temperature of 175°C, it is suitable for demanding environments. The SCT4026DEHRC11 is housed in a TO-247-3 package with a through-hole mounting type. This device is AEC-Q101 qualified, making it a robust choice for automotive and industrial power conversion systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 29A, 18V
FET Feature-
Power Dissipation (Max)176W
Vgs(th) (Max) @ Id4.8V @ 15.4mA
Supplier Device PackageTO-247N
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+21V, -4V
Drain to Source Voltage (Vdss)750 V
Gate Charge (Qg) (Max) @ Vgs94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2320 pF @ 500 V
QualificationAEC-Q101

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