SCT4026DEC11
750V, 26M, 3-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's N-Channel SiCFET, part number SCT4026DEC11, offers a 750V drain-to-source voltage rating with a continuous drain current of 56A at 25°C (Tc). This through-hole component, housed in a TO-247-3 package, features a maximum power dissipation of 176W and a Tj of 175°C. The device exhibits a low on-resistance of 34mOhm at 29A and 18V, with a gate charge of 94 nC at 18V. Input capacitance (Ciss) is rated at 2320 pF maximum at 500V. The SCT4026DEC11 is suitable for high-power applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 176W |
| Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
