SCT4018KW7TL
1200V, 75A, 7-PIN SMD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT4018KW7TL is a high-performance N-Channel Silicon Carbide FET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 267W. Featuring a low on-resistance (Rds On) of 23.4mOhm at 42A and 18V, this device utilizes Trench-ST technology for enhanced efficiency. The SCT4018KW7TL is packaged in a TO-263-7L surface mount case and operates at junction temperatures up to 175°C. Key parameters include a gate charge (Qg) of 170 nC at 18V and input capacitance (Ciss) of 4532 pF at 800V. This device is suitable for power conversion systems in electric vehicles, industrial power supplies, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tj) |
| Rds On (Max) @ Id, Vgs | 23.4mOhm @ 42A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 267W |
| Vgs(th) (Max) @ Id | 4.8V @ 22.2mA |
| Supplier Device Package | TO-263-7L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4532 pF @ 800 V |
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