SCT4018KEC11
1200V, 81A, 3-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT4018KEC11 is a 1200V N-Channel Silicon Carbide (SiC) FET designed for high-performance power applications. This through-hole component features a continuous drain current of 81A at 25°C (Tj) and a maximum power dissipation of 312W. The device exhibits a low on-resistance of 23.4mOhm at 42A and 18V, with a gate-source voltage range of +21V to -4V. Key parameters include a gate charge of 170 nC @ 18V and input capacitance of 4532 pF @ 800V. The SCT4018KEC11 is housed in a TO-247-3 package, suitable for demanding environments with an operating temperature up to 175°C. Its robust specifications make it a strong candidate for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tj) |
| Rds On (Max) @ Id, Vgs | 23.4mOhm @ 42A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 312W |
| Vgs(th) (Max) @ Id | 4.8V @ 22.2mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4532 pF @ 800 V |
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