SCT4013DW7TL
750V, 98A, 7-PIN SMD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT4013DW7TL is a high-performance N-channel SiCFET designed for demanding power applications. This component features a drain-source voltage (Vds) of 750 V and a continuous drain current (Id) of 98 A at 25°C. With a low on-resistance (Rds On) of 16.9 mOhm at 58 A and 18 V, it offers efficient power handling with a maximum power dissipation of 267 W. The TO-263-7L package provides a robust surface mount solution for thermal management. Key parameters include a gate charge (Qg) of 170 nC at 18 V and input capacitance (Ciss) of 4580 pF at 500 V. The operating temperature range extends to 175°C (TJ). This device is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tj) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 58A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 267W |
| Vgs(th) (Max) @ Id | 4.8V @ 30.8mA |
| Supplier Device Package | TO-263-7L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4580 pF @ 500 V |
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