SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SiCFET (Silicon Carbide) N-Channel MOSFET, part number SCT4013DRC15, offers a 750V drain-to-source voltage (Vdss) and a continuous drain current of 105A (Tc) at 25°C. This through-hole component features a TO-247-4L package with a maximum power dissipation of 312W. Key electrical characteristics include a maximum on-resistance (Rds On) of 16.9mOhm at 58A and 18V, a gate charge (Qg) of 170 nC at 18V, and an input capacitance (Ciss) of 4580 pF at 500V. The device operates at an ambient temperature range up to 175°C (TJ) and supports a gate-source voltage (Vgs) range of +21V to -4V. This component is suitable for applications in power conversion, electric vehicles, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 58A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 312W |
| Vgs(th) (Max) @ Id | 4.8V @ 30.8mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4580 pF @ 500 V |
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