SCT4013DEC11
750V, 105A, 3-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor N-Channel SiCFET, part number SCT4013DEC11, offers a 750V breakdown voltage and continuous drain current capability of 105A at 25°C (Tj). This device features a low on-resistance of 16.9mOhm at 58A and 18V gate drive, facilitated by a maximum gate charge of 170 nC at 18V. The input capacitance (Ciss) is rated at 4580 pF maximum at 500V. Designed with a 3-pin TO-247N through-hole package, the SCT4013DEC11 can dissipate up to 312W of power and operate at junction temperatures up to 175°C. This component is suitable for high-power applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tj) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 58A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 312W |
| Vgs(th) (Max) @ Id | 4.8V @ 30.8mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4580 pF @ 500 V |
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