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SCT3160KW7TL

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SCT3160KW7TL

SICFET N-CH 1200V 17A TO263-7

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor SCT3160KW7TL is a 1200 V N-Channel SiCFET designed for high-performance power applications. This device offers a continuous drain current of 17A (Tc) and a maximum power dissipation of 100W, suitable for demanding environments. Featuring a low on-resistance of 208mOhm @ 5A, 18V, it minimizes conduction losses. The gate charge (Qg) is 42 nC @ 18V, and input capacitance (Ciss) is 398 pF @ 800V, enabling efficient switching. Operating temperature reaches 175°C (TJ). The SCT3160KW7TL is available in a TO-263-7 surface mount package, supplied on tape and reel. This component is utilized in industries such as electric vehicle power supplies, industrial motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs208mOhm @ 5A, 18V
FET Feature-
Power Dissipation (Max)100W
Vgs(th) (Max) @ Id5.6V @ 2.5mA
Supplier Device PackageTO-263-7
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds398 pF @ 800 V

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