Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

SCT3160KW7HRTL

Banner
productimage

SCT3160KW7HRTL

1200V, 17A, 7-PIN SMD, TRENCH-ST

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor SCT3160KW7HRTL is a 1200 V N-Channel Silicon Carbide (SiC) Junction Transistor. This surface mount device, packaged in a TO-263-7L, offers a continuous drain current of 17A (Tc) at 25°C and a maximum Rds On of 208mOhm at 5A, 18V. Key parameters include a gate charge of 42 nC @ 18 V and input capacitance of 398 pF @ 800 V. It operates within a temperature range of 175°C (TJ) and supports gate-source voltages from -4V to +22V. Qualified to AEC-Q101, this component is suited for automotive applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs208mOhm @ 5A, 18V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id5.6V @ 2.5mA
Supplier Device PackageTO-263-7L
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds398 pF @ 800 V
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
RQ7G080BGTCR

NCH 40V 8A, TSMT8, POWER MOSFET

product image
RTQ045N03TR

MOSFET N-CH 30V 4.5A TSMT6

product image
R6025JNZC17

MOSFET N-CH 600V 25A TO3PF