SCT3160KLHRC11
SICFET N-CH 1200V 17A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor SCT3160KLHRC11 is an N-Channel SiCFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 17 A at 25°C (Tc). With a maximum power dissipation of 103 W and an operating temperature up to 175°C (TJ), it is suitable for demanding environments. The SCT3160KLHRC11 offers a low on-resistance (Rds On) of 208 mOhms at 5 A and 18 V, with a gate-source voltage (Vgs) drive requirement of 18 V (Max Rds On). Key parameters include input capacitance (Ciss) of 398 pF at 800 V and gate charge (Qg) of 42 nC at 18 V. This device is qualified to AEC-Q101, making it ideal for automotive applications. It is supplied in a TO-247N package for through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 5A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 103W |
| Vgs(th) (Max) @ Id | 5.6V @ 2.5mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 398 pF @ 800 V |
| Qualification | AEC-Q101 |
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