SCT3160KLGC11
SICFET N-CH 1200V 17A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3160KLGC11 is an N-Channel SiCFET designed for high-voltage applications. This component features a 1200 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 17 A at 25°C, with a maximum power dissipation of 103 W at the same temperature. The device offers a low on-resistance (Rds On) of 208 mOhm at 5 A and 18 V gate-source voltage. Key parameters include a gate charge (Qg) of 42 nC at 18 V and an input capacitance (Ciss) of 398 pF at 800 V. The SCT3160KLGC11 operates within an extended temperature range up to 175°C (TJ) and is housed in a TO-247N package, suitable for through-hole mounting. This SiCFET is utilized in demanding sectors such as power supplies and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 5A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 103W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 2.5mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 398 pF @ 800 V |
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