SCT3120AW7TL
SICFET N-CH 650V 21A TO263-7Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SiCFET N-Channel device, part number SCT3120AW7TL, offers a 650 V drain-source voltage and 21 A continuous drain current at 25°C. This surface mount TO-263-7 package component features a maximum power dissipation of 100 W and an operating temperature up to 175°C. The device exhibits a low on-resistance of 156 mOhm at 6.7 A and 18 V, with a gate charge of 38 nC at 18 V. Input capacitance (Ciss) is rated at 460 pF maximum at 500 V. Typical applications for this SiCFET include high-efficiency power conversion systems in automotive and industrial sectors. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 6.7A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 100W |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Supplier Device Package | TO-263-7 |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 500 V |
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