SCT3120ALHRC11
SICFET N-CH 650V 21A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3120ALHRC11 is a 650V N-Channel SiCFET designed for high-performance applications. This component features a continuous drain current of 21A (Tc) and a maximum power dissipation of 103W. The device boasts a low on-resistance of 156mOhm at 6.7A and 18V. Key parameters include an input capacitance (Ciss) of 460pF (max) at 500V and a gate charge (Qg) of 38nC (max) at 18V. Operating at temperatures up to 175°C (TJ), it is qualified to AEC-Q101 and is suitable for automotive applications. The SCT3120ALHRC11 is presented in a TO-247N package with through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 6.7A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 103W |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 500 V |
| Qualification | AEC-Q101 |
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