SCT3120ALGC11
SICFET N-CH 650V 21A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's SCT3120ALGC11 is a 650V N-Channel SiCFET designed for high-power applications. This component features a continuous drain current of 21A (Tc) with a maximum power dissipation of 103W (Tc). The drain-to-source voltage is rated at 650V, and the Rds On is a maximum of 156mOhm at 6.7A and 18V gate drive. Key parameters include a gate charge (Qg) of 38 nC @ 18 V and input capacitance (Ciss) of 460 pF @ 500 V. The SCT3120ALGC11 operates at junction temperatures up to 175°C and is housed in a TO-247N package, suitable for through-hole mounting. This SiCFET is utilized in industries such as industrial power supplies, electric vehicle charging, and solar inverters, where high efficiency and voltage handling are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 6.7A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 103W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 500 V |
Request a Quote
Clients Also Buy
R5009ANX
MOSFET N-CH 500V 9A TO220
RS1E240BNTB
MOSFET N-CH 30V 24A 8HSOP
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
