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SCT3105KW7TL

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SCT3105KW7TL

SICFET N-CH 1200V 23A TO263-7

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT3105KW7TL is a SiCFET N-Channel power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 23A at 25°C. The low on-resistance (Rds On) of 137mOhm at 7.6A and 18V, coupled with a maximum power dissipation of 125W, makes it suitable for demanding power conversion tasks. The gate charge (Qg) is 51 nC at 18V, and the input capacitance (Ciss) is 574 pF at 800V. Operating at junction temperatures up to 175°C, this component is housed in a TO-263-7 surface mount package and supplied on tape and reel. The SCT3105KW7TL finds application in industries such as electric vehicles, industrial power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs137mOhm @ 7.6A, 18V
FET Feature-
Power Dissipation (Max)125W
Vgs(th) (Max) @ Id5.6V @ 3.81mA
Supplier Device PackageTO-263-7
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds574 pF @ 800 V

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