SCT3105KRC15
1200V, 24A, 4-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT3105KRC15, an N-Channel Silicon Carbide Junction Transistor, offers 1200V drain-source breakdown voltage and 24A continuous drain current. This through-hole component utilizes a TO-247-4L package, featuring a maximum power dissipation of 134W and an operating junction temperature of 175°C. Key parameters include a 137mOhm maximum on-resistance at 7.6A and 18V gate-source voltage, 51nC gate charge at 18V, and 574pF input capacitance at 800V. The device supports a gate drive voltage range of up to +22V and -4V. Applications for this high-performance transistor include electric vehicle power conversion, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tj) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 7.6A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Vgs(th) (Max) @ Id | 5.6V @ 3.81mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF @ 800 V |
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