SCT3105KRC14
SICFET N-CH 1200V 24A TO247-4LManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT3105KRC14 is an N-Channel SiCFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 24A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 137mOhm maximum at 7.6A and 18V gate drive, with a typical gate charge (Qg) of 51 nC at 18V. Its input capacitance (Ciss) is 574 pF maximum at 800V. The SCT3105KRC14 is packaged in a TO-247-4L through-hole configuration, rated for a maximum power dissipation of 134W and an operating junction temperature of 175°C. It is suitable for power conversion systems in industrial, automotive, and renewable energy sectors. The maximum gate-source voltage (Vgs) is ±22V, and the threshold voltage (Vgs(th)) is 5.6V maximum at 3.81mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 7.6A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Vgs(th) (Max) @ Id | 5.6V @ 3.81mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF @ 800 V |
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