SCT3105KLGC11
SICFET N-CH 1200V 24A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SiC FET N-Channel device, part number SCT3105KLGC11, offers a 1200V drain-source voltage and 24A continuous drain current at 25°C. This SiCFET technology provides a maximum on-resistance of 137mOhm at 7.6A and 18V gate-source voltage, with a gate charge of 51nC at 18V. The device features a maximum power dissipation of 134W and operates at junction temperatures up to 175°C. Housed in a TO-247N package, the SCT3105KLGC11 is suitable for high-power applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. The maximum gate-source voltage is +/-22V, with a threshold voltage of 5.6V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 7.6A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Vgs(th) (Max) @ Id | 5.6V @ 3.81mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF @ 800 V |
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