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SCT3080KW7TL

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SCT3080KW7TL

SICFET N-CH 1200V 30A TO263-7

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT3080KW7TL SiCFET is an N-Channel device featuring a 1200 V breakdown voltage and a continuous drain current capability of 30 A at 25°C (Tc). This surface mount component, housed in a TO-263-7 package, offers a maximum power dissipation of 159 W and an operating junction temperature of 175°C. Key electrical parameters include a typical Rds(On) of 104 mOhm at 10 A and 18 V, and a gate charge (Qg) of 60 nC at 18 V. Input capacitance (Ciss) is rated at 785 pF @ 800 V. The SCT3080KW7TL is suitable for demanding applications in power supply, motor control, and industrial automation sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs104mOhm @ 10A, 18V
FET Feature-
Power Dissipation (Max)159W
Vgs(th) (Max) @ Id5.6V @ 5mA
Supplier Device PackageTO-263-7
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds785 pF @ 800 V

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