SCT3080KW7TL
SICFET N-CH 1200V 30A TO263-7Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3080KW7TL SiCFET is an N-Channel device featuring a 1200 V breakdown voltage and a continuous drain current capability of 30 A at 25°C (Tc). This surface mount component, housed in a TO-263-7 package, offers a maximum power dissipation of 159 W and an operating junction temperature of 175°C. Key electrical parameters include a typical Rds(On) of 104 mOhm at 10 A and 18 V, and a gate charge (Qg) of 60 nC at 18 V. Input capacitance (Ciss) is rated at 785 pF @ 800 V. The SCT3080KW7TL is suitable for demanding applications in power supply, motor control, and industrial automation sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 159W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-263-7 |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |