SCT3080KRC15
1200V, 31A, 4-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor SCT3080KRC15 is an N-Channel SiC Trench MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 31A at 25°C. The device offers a low on-resistance (Rds On) of 104mOhm at 10A and 18V, with a maximum power dissipation of 165W. Its through-hole mounting type and TO-247-4L package facilitate integration into power systems. Key parameters include a gate charge (Qg) of 60 nC at 18V and input capacitance (Ciss) of 785 pF at 800V. The operating junction temperature (Tj) can reach up to 175°C. This MOSFET is suitable for use in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tj) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |
Request a Quote
Clients Also Buy
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
R6530KNXC7G
650V 30A TO-220FM, HIGH-SPEED SW
R5009ANX
MOSFET N-CH 500V 9A TO220
