SCT3080KRC14
SICFET N-CH 1200V 31A TO247-4LManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT3080KRC14 is a high-performance N-Channel SiCFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 31 A at 25°C. With a maximum power dissipation of 165 W, it is suitable for high-power conversion systems. Key electrical characteristics include a low on-resistance (Rds On) of 104 mOhm at 10 A and 18 V, and a gate charge (Qg) of 60 nC at 18 V. The input capacitance (Ciss) is 785 pF at 800 V. Operating at an ambient temperature up to 175°C (TJ), this SiCFET is packaged in a TO-247-4L through-hole configuration. It finds application in electric vehicle power conversion, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |