SCT3080KLHRC11
SICFET N-CH 1200V 31A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3080KLHRC11 is a SiCFET N-Channel power MOSFET designed for high-voltage applications. This through-hole component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 31 A at 25°C, with a maximum power dissipation of 165 W. It boasts a low on-resistance of 104 mOhm at 10 A and 18 V gate drive, supported by a maximum gate charge of 60 nC at 18 V. The device operates at junction temperatures up to 175°C and is housed in a TO-247N package. Qualified to AEC-Q101 standards, this component is suitable for automotive and other demanding applications requiring robust performance in power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |
| Qualification | AEC-Q101 |