SCT3080KLGC11
SICFET N-CH 1200V 31A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SiCFET N-Channel MOSFET, part number SCT3080KLGC11. This device features a 1200 V drain-source voltage and a continuous drain current of 31 A at 25°C (Tc). The SCT3080KLGC11 offers a maximum on-resistance of 104 mOhm at 10 A and 18 V gate-source voltage. Designed with SiCFET technology, it operates with a gate-source drive voltage up to 18 V. Key parameters include a maximum gate charge of 60 nC at 18 V and an input capacitance of 785 pF at 800 V. It supports a maximum junction temperature of 175°C and a maximum power dissipation of 165 W (Tc). The component is housed in a TO-247N package and is suitable for through-hole mounting. This component finds application in high-voltage power conversion systems, including electric vehicle charging infrastructure and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |
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