SCT3080AW7TL
SICFET N-CH 650V 29A TO263-7Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT3080AW7TL is a SiCFET N-Channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) capability of 29 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 104 mOhm at 10 A and 18 V, contributing to reduced conduction losses. With a maximum power dissipation of 125 W and an operating junction temperature of 175°C, it is suitable for demanding thermal environments. The SCT3080AW7TL utilizes a TO-263-7 (TO-263-8, D2PAK) surface mount package, facilitating efficient board-level integration. Key parameters include a gate charge (Qg) of 48 nC at 18 V and an input capacitance (Ciss) of 571 pF at 500 V. This device finds application in power supply units, motor control, and electric vehicle charging infrastructure. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 125W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-263-7 |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 571 pF @ 500 V |