SCT3080ARHRC15
650V, 30A, 4-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number SCT3080ARHRC15, offers a 650V drain-source voltage and 30A continuous drain current at 25°C. This device features a low on-resistance of 104mOhm at 10A and 18V, with a gate charge of 48nC at 18V. The SCT3080ARHRC15 utilizes advanced MOSFET technology, providing 134W of maximum power dissipation and operating up to a junction temperature of 175°C. Its TO-247-4L package with through-hole mounting accommodates demanding thermal management. This component is AEC-Q101 qualified and designed for automotive applications, including power conversion, electric vehicle systems, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247-4L |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 571 pF @ 500 V |
| Qualification | AEC-Q101 |
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