SCT3080ARC15
650V, 30A, 4-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3080ARC15 is a 650V N-Channel Silicon Carbide (SiC) MOSFET designed for high-efficiency power conversion. This through-hole component, housed in a TO-247-4L package, offers a continuous drain current rating of 30A at 25°C (Tj) and a maximum power dissipation of 134W. Key electrical characteristics include a Drain to Source Voltage (Vdss) of 650V, a maximum on-resistance (Rds On) of 104mOhm at 10A and 18V drive voltage, and a gate charge (Qg) of 48 nC at 18V. The input capacitance (Ciss) is 571 pF at 500V. Operating at junction temperatures up to 175°C, this device is suitable for demanding applications in electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tj) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 571 pF @ 500 V |
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