SCT3080ARC14
SICFET N-CH 650V 30A TO247-4LManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT3080ARC14 is a 650 V N-Channel SiCFET designed for high-performance applications. This through-hole component, housed in a TO-247-4L package, offers a continuous drain current capability of 30A at 25°C (Tc) and a maximum power dissipation of 134W. Key electrical parameters include a Vgs(th) of 5.6V at 5mA, a maximum Rds(on) of 104mOhm at 10A and 18V, and a gate charge of 48nC at 18V. Input capacitance (Ciss) is specified at a maximum of 571pF at 500V. The device operates across a wide temperature range, up to 175°C (TJ), with a maximum Vgs rating of +22V and -4V. This SiC MOSFET is suitable for applications in power supply, motor drive, and industrial power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 571 pF @ 500 V |