SCT3080ALHRC11
SICFET N-CH 650V 30A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT3080ALHRC11 is an N-Channel Silicon Carbide Field Effect Transistor. This SiCFET features a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 30A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 104mOhm at 10A and 18V gate-source voltage. With a gate charge (Qg) of 48 nC at 18V, it is designed for efficient switching. The SCT3080ALHRC11 operates at junction temperatures up to 175°C and dissipates a maximum power of 134W. It is packaged in a TO-247N (TO-247-3) through-hole configuration and is AEC-Q101 qualified, making it suitable for automotive applications. This component is commonly utilized in power conversion systems within the electric vehicle and industrial power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 571 pF @ 500 V |
| Qualification | AEC-Q101 |