SCT3080ALGC11
SICFET N-CH 650V 30A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SiC FET N-Channel device, part number SCT3080ALGC11, offers a 650 V drain-to-source voltage rating and a continuous drain current capability of 30A (Tc). This SiCFET features a maximum on-resistance of 104mOhm at 10A and 18V gate-source voltage. The device is housed in a TO-247N package suitable for through-hole mounting and supports a maximum junction temperature of 175°C. Key parameters include a gate charge of 48 nC @ 18 V and an input capacitance of 571 pF @ 500 V. Maximum power dissipation is rated at 134W (Tc). This component is utilized in applications such as power supplies, electric vehicle charging, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 134W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 571 pF @ 500 V |
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