SCT3060AW7TL
SICFET N-CH 650V 38A TO263-7Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3060AW7TL is a high-performance N-Channel SiCFET designed for demanding power applications. This device features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 38A at 25°C (Tc). With a maximum power dissipation of 159W and an operating temperature up to 175°C (TJ), it is suitable for environments requiring robust thermal management. The SiCFET technology offers a low Rds On of 78mOhm at 13A and 18V, contributing to efficient power conversion. Key parameters include a gate charge (Qg) of 58 nC @ 18V and input capacitance (Ciss) of 852 pF @ 500V. The SCT3060AW7TL is supplied in a TO-263-7 surface mount package, ideal for automated assembly. This component finds application in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 159W |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
| Supplier Device Package | TO-263-7 |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V |