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SCT3060AW7TL

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SCT3060AW7TL

SICFET N-CH 650V 38A TO263-7

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT3060AW7TL is a high-performance N-Channel SiCFET designed for demanding power applications. This device features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 38A at 25°C (Tc). With a maximum power dissipation of 159W and an operating temperature up to 175°C (TJ), it is suitable for environments requiring robust thermal management. The SiCFET technology offers a low Rds On of 78mOhm at 13A and 18V, contributing to efficient power conversion. Key parameters include a gate charge (Qg) of 58 nC @ 18V and input capacitance (Ciss) of 852 pF @ 500V. The SCT3060AW7TL is supplied in a TO-263-7 surface mount package, ideal for automated assembly. This component finds application in industries such as electric vehicles, industrial power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs78mOhm @ 13A, 18V
FET Feature-
Power Dissipation (Max)159W
Vgs(th) (Max) @ Id5.6V @ 6.67mA
Supplier Device PackageTO-263-7
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds852 pF @ 500 V

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