SCT3060ARC15
650V, 39A, 4-PIN THD, TRENCH-STRManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel Silicon Carbide (SiC) MOSFET, part number SCT3060ARC15. This device features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 39 A at 25°C. The SCT3060ARC15 offers a low on-resistance of 78mOhm maximum at 13A and 18V. With a maximum power dissipation of 165W and an operating junction temperature of 175°C, this TO-247-4L packaged device is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 58 nC at 18V and an Input Capacitance (Ciss) of 852 pF at 500V. This component is widely utilized in power conversion systems, electric vehicle charging infrastructure, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tj) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V |
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