SCT3060ARC14
SICFET N-CH 650V 39A TO247-4LManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3060ARC14 is a 650V N-channel SiCFET designed for high-performance power applications. This TO-247-4L package component offers a continuous drain current of 39A at 25°C and a maximum power dissipation of 165W. Key electrical characteristics include a low on-resistance of 78mOhm at 13A and 18V, an input capacitance (Ciss) of 852pF, and a gate charge (Qg) of 58nC. The device operates with a gate-source voltage range of +22V to -4V and a threshold voltage (Vgs(th)) of 5.6V. It is suitable for demanding sectors such as electric vehicle charging, industrial power supplies, and renewable energy systems. The component is supplied in tubes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V |
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