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SCT3060ARC14

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SCT3060ARC14

SICFET N-CH 650V 39A TO247-4L

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT3060ARC14 is a 650V N-channel SiCFET designed for high-performance power applications. This TO-247-4L package component offers a continuous drain current of 39A at 25°C and a maximum power dissipation of 165W. Key electrical characteristics include a low on-resistance of 78mOhm at 13A and 18V, an input capacitance (Ciss) of 852pF, and a gate charge (Qg) of 58nC. The device operates with a gate-source voltage range of +22V to -4V and a threshold voltage (Vgs(th)) of 5.6V. It is suitable for demanding sectors such as electric vehicle charging, industrial power supplies, and renewable energy systems. The component is supplied in tubes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C39A (Tc)
Rds On (Max) @ Id, Vgs78mOhm @ 13A, 18V
FET Feature-
Power Dissipation (Max)165W
Vgs(th) (Max) @ Id5.6V @ 6.67mA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds852 pF @ 500 V

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