SCT3060ALGC11
SICFET N-CH 650V 39A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3060ALGC11 is a SiCFET N-Channel power MOSFET designed for high-efficiency applications. This device features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 39A at 25°C. With a maximum power dissipation of 165W (Tc), it offers robust performance in demanding environments. The on-resistance (Rds On) is specified at a maximum of 78mOhm at 13A and 18V gate drive. Key parameters include a gate charge (Qg) of 58 nC at 18V and input capacitance (Ciss) of 852 pF at 500V. The SCT3060ALGC11 is housed in a TO-247N package with through-hole mounting. It operates at junction temperatures up to 175°C and is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V |
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