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SCT3040KRHRC15

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SCT3040KRHRC15

1200V, 55A, 4-PIN THD, TRENCH-ST

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT3040KRHRC15 is an N-Channel power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 55A at 25°C (Tc). With a maximum power dissipation of 262W and a low on-resistance (Rds On) of 52mOhm at 20A and 18V Vgs, it offers efficient switching performance. The gate charge (Qg) is rated at a maximum of 107 nC at 18V, and input capacitance (Ciss) is 1337 pF at 800V. The device operates at temperatures up to 175°C (TJ) and has a maximum gate source voltage (Vgs) of +22V and -4V. This MOSFET utilizes Trench-ST technology and is packaged in a 4-pin TO-247-4L through-hole configuration. Qualified to AEC-Q101, the SCT3040KRHRC15 is suitable for demanding automotive applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs52mOhm @ 20A, 18V
FET Feature-
Power Dissipation (Max)262W
Vgs(th) (Max) @ Id5.6V @ 10mA
Supplier Device PackageTO-247-4L
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds1337 pF @ 800 V
QualificationAEC-Q101

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