SCT3040KRC15
1200V, 55A, 4-PIN THD, TRENCH-STManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT3040KRC15 is a 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-power applications. This through-hole component features a continuous drain current capability of 55A at 25°C (Tj) and a maximum power dissipation of 262W. The low on-resistance is specified at 52mOhm maximum at 20A, 18V. Key characteristics include a gate charge of 107nC at 18V and an input capacitance of 1337pF at 800V. The TO-247-4L package facilitates efficient thermal management, supporting an operating junction temperature of up to 175°C. This device is suitable for demanding power conversion systems in industries such as electric vehicles, industrial power supplies, and renewable energy infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tj) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W |
| Vgs(th) (Max) @ Id | 5.6V @ 10mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1337 pF @ 800 V |
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