SCT3040KRC14
SICFET N-CH 1200V 55A TO247-4LManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT3040KRC14 is a SiCFET N-Channel power transistor designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 55A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 52mOhm at 20A and 18V gate-source voltage, with a maximum power dissipation of 262W. Its SiCFET technology enables efficient operation at high temperatures, up to 175°C (TJ). The SCT3040KRC14 is housed in a TO-247-4L through-hole package, suitable for demanding power conversion systems in electric vehicles, industrial power supplies, and renewable energy sectors. Key parameters include a Gate Charge (Qg) of 107 nC and Input Capacitance (Ciss) of 1337 pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W |
| Vgs(th) (Max) @ Id | 5.6V @ 10mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1337 pF @ 800 V |
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