SCT3040KLHRC11
SICFET N-CH 1200V 55A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel SiCFET, part number SCT3040KLHRC11. This device features a 1200 V drain-source voltage and a continuous drain current of 55 A at 25°C. The Rds(on) is specified at a maximum of 52 mOhm at 20 A and 18 V gate drive. With a gate charge (Qg) of 107 nC at 18 V and input capacitance (Ciss) of 1337 pF at 800 V, the SCT3040KLHRC11 offers efficient switching characteristics. The device is housed in a TO-247N package with through-hole mounting and a maximum power dissipation of 262 W. Operating temperature reaches 175°C (TJ). This component is qualified to AEC-Q101, indicating suitability for automotive applications. The maximum gate-source voltage is +22V and -4V, with a threshold voltage (Vgs(th)) of 5.6 V at 10 mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W |
| Vgs(th) (Max) @ Id | 5.6V @ 10mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1337 pF @ 800 V |
| Qualification | AEC-Q101 |