SCT3040KLGC11
SICFET N-CH 1200V 55A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3040KLGC11 is an N-Channel SiCFET designed for demanding high-voltage applications. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 55A at 25°C (Tc), with a maximum power dissipation of 262W (Tc). The device exhibits a low on-resistance (Rds On) of 52mOhm at 20A and 18V, facilitated by a 18V drive voltage. Key parameters include a gate charge (Qg) of 107 nC at 18V and input capacitance (Ciss) of 1337 pF at 800V. Operating at junction temperatures up to 175°C, the SCT3040KLGC11 is housed in a TO-247N package with a through-hole mounting type. This SiC MOSFET is suitable for power conversion systems across industries such as electric vehicles, industrial power supplies, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 10mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1337 pF @ 800 V |