SCT3030KLHRC11
SICFET N-CH 1200V 72A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SiCFET N-Channel SCT3030KLHRC11. This automotive-qualified device features a 1200 V drain-to-source voltage and 72 A continuous drain current at 25°C (Tc). With a maximum power dissipation of 339W and a low on-resistance of 39 mOhm at 27 A and 18 V, it is designed for demanding applications. Key parameters include a gate charge of 131 nC at 18 V and input capacitance of 2222 pF at 800 V. The SCT3030KLHRC11 utilizes a TO-247N through-hole package and operates at temperatures up to 175°C. This component is suitable for automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 339W |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2222 pF @ 800 V |
| Qualification | AEC-Q101 |
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