SCT3030KLGC11
SICFET N-CH 1200V 72A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3030KLGC11 is a SiCFET N-Channel power MOSFET designed for high-voltage, high-current applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 72 A at 25°C (Tc). The Rds On is specified at a maximum of 39 mOhm at 27 A and 18 V gate-source voltage. With a maximum power dissipation of 339 W (Tc), it offers robust thermal performance. The device operates at junction temperatures up to 175°C and is housed in a TO-247N package for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 131 nC at 18 V and input capacitance (Ciss) of 2222 pF at 800 V. This component is suitable for demanding power conversion systems in industries such as electric vehicles, industrial power supplies, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 339W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2222 pF @ 800 V |
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