SCT3030AW7TL
SICFET N-CH 650V 70A TO263-7Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3030AW7TL is an N-Channel SiCFET with a 650V drain-to-source voltage (Vdss). This device offers a continuous drain current (Id) of 70A at 25°C (Tc) and a maximum power dissipation of 267W. Key electrical characteristics include a low on-resistance (Rds On) of 39mOhm at 27A and 18V, and a gate charge (Qg) of 104 nC at 18V. Input capacitance (Ciss) is rated at a maximum of 1526 pF at 500V. The device features a surface mount TO-263-7 package and operates at junction temperatures up to 175°C. This SiCFET is suitable for applications in power conversion, electric vehicles, and industrial power supplies. The gate-source voltage (Vgs) limits are +22V and -4V, with a threshold voltage (Vgs(th)) of 5.6V at 13.3mA. The SCT3030AW7TL is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 267W |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Supplier Device Package | TO-263-7 |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |