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SCT3030AW7TL

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SCT3030AW7TL

SICFET N-CH 650V 70A TO263-7

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's SCT3030AW7TL is an N-Channel SiCFET with a 650V drain-to-source voltage (Vdss). This device offers a continuous drain current (Id) of 70A at 25°C (Tc) and a maximum power dissipation of 267W. Key electrical characteristics include a low on-resistance (Rds On) of 39mOhm at 27A and 18V, and a gate charge (Qg) of 104 nC at 18V. Input capacitance (Ciss) is rated at a maximum of 1526 pF at 500V. The device features a surface mount TO-263-7 package and operates at junction temperatures up to 175°C. This SiCFET is suitable for applications in power conversion, electric vehicles, and industrial power supplies. The gate-source voltage (Vgs) limits are +22V and -4V, with a threshold voltage (Vgs(th)) of 5.6V at 13.3mA. The SCT3030AW7TL is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs39mOhm @ 27A, 18V
FET Feature-
Power Dissipation (Max)267W
Vgs(th) (Max) @ Id5.6V @ 13.3mA
Supplier Device PackageTO-263-7
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds1526 pF @ 500 V

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