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SCT3030ARC14

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SCT3030ARC14

SICFET N-CH 650V 70A TO247-4L

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor SiCFET N-Channel, part number SCT3030ARC14, offers a 650V drain-to-source voltage and 70A continuous drain current at 25°C. This device features a low on-resistance of 39mOhm maximum at 27A and 18V gate-source voltage. With a maximum power dissipation of 262W and an operating junction temperature of 175°C, the SCT3030ARC14 is suitable for demanding applications. The TO-247-4L package provides robust thermal performance. This component is utilized in power conversion, electric vehicle charging, and industrial motor drive systems. Key electrical characteristics include a maximum gate charge of 104 nC at 18V and input capacitance of 1526 pF at 500V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs39mOhm @ 27A, 18V
FET Feature-
Power Dissipation (Max)262W
Vgs(th) (Max) @ Id5.6V @ 13.3mA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -4V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds1526 pF @ 500 V

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