SCT3030ARC14
SICFET N-CH 650V 70A TO247-4LManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SiCFET N-Channel, part number SCT3030ARC14, offers a 650V drain-to-source voltage and 70A continuous drain current at 25°C. This device features a low on-resistance of 39mOhm maximum at 27A and 18V gate-source voltage. With a maximum power dissipation of 262W and an operating junction temperature of 175°C, the SCT3030ARC14 is suitable for demanding applications. The TO-247-4L package provides robust thermal performance. This component is utilized in power conversion, electric vehicle charging, and industrial motor drive systems. Key electrical characteristics include a maximum gate charge of 104 nC at 18V and input capacitance of 1526 pF at 500V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |
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