SCT3030ALHRC11
SICFET N-CH 650V 70A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT3030ALHRC11 is a 650V N-Channel SiCFET designed for high-performance power applications. This component offers a continuous drain current of 70A at 25°C (Tc) and a maximum power dissipation of 262W. Key electrical characteristics include a drain-to-source voltage (Vdss) of 650V, a maximum on-resistance (Rds On) of 39mOhm at 27A and 18V gate drive, and an input capacitance (Ciss) of 1526pF at 500V. The gate charge (Qg) is specified at 104nC maximum at 18V. Operating at junction temperatures up to 175°C, this SiCFET features a TO-247N through-hole package. With AEC-Q101 qualification, the SCT3030ALHRC11 is suitable for automotive and industrial power conversion systems requiring robust and efficient switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |
| Qualification | AEC-Q101 |