SCT3030ALGC11
SICFET N-CH 650V 70A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT3030ALGC11 is a 650V, 70A N-Channel SiCFET housed in a TO-247N package. This device offers a maximum on-resistance of 39mOhm at 27A and 18V gate drive. Key parameters include a drain-source voltage (Vdss) of 650V, continuous drain current (Id) of 70A at 25°C (Tc), and a maximum power dissipation of 262W (Tc). The gate charge (Qg) is specified at 104 nC maximum at 18V, with input capacitance (Ciss) at 1526 pF maximum at 500V. Maximum operating junction temperature is 175°C. This component is suitable for high-power applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy inverters. The device is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |