SCT3022KLGC11
SICFET N-CH 1200V 95A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor SiCFET N-Channel SCT3022KLGC11. This device features a 1200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 95A at 25°C, with a maximum power dissipation of 427W. The N-channel SiC FET offers a low on-resistance (Rds On) of 28.6mOhm at 36A and 18V. Key parameters include a gate charge (Qg) of 178 nC maximum at 10V and input capacitance (Ciss) of 2879 pF maximum at 800V. The operating junction temperature (TJ) reaches 175°C. This component is housed in a TO-247N package with through-hole mounting. Applications include power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.6mOhm @ 36A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 427W |
| Vgs(th) (Max) @ Id | 5.6V @ 18.2mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2879 pF @ 800 V |