SCT3022ALGC11
SICFET N-CH 650V 93A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT3022ALGC11 is a SiCFET (Silicon Carbide Field-Effect Transistor) with a 650V drain-to-source voltage and 93A continuous drain current at 25°C (Tc). This N-Channel device features a maximum power dissipation of 339W (Tc) and an Rds On of 28.6mOhm at 36A and 18V. It has a gate charge (Qg) of 133 nC at 18V and an input capacitance (Ciss) of 2208 pF at 500V. With a maximum operating junction temperature of 175°C, the SCT3022ALGC11 is housed in a TO-247N package for through-hole mounting. This component is widely utilized in power factor correction, motor drive, and server power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.6mOhm @ 36A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 339W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 18.2mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2208 pF @ 500 V |
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