SCT3017ALHRC11
SICFET N-CH 650V 118A TO247NManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT3017ALHRC11 is an N-Channel SiCFET designed for demanding applications requiring high voltage and current handling. This component features a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 118A at 25°C (Tc). With a maximum power dissipation of 427W, it is suitable for high-power switching applications. The low on-resistance (Rds On) of 22.1mOhm at 47A and 18V drive voltage, coupled with a maximum operating temperature of 175°C, ensures efficient operation. Key parameters include a gate charge (Qg) of 172 nC at 18V and input capacitance (Ciss) of 2884 pF at 500V. The SCT3017ALHRC11 is housed in a TO-247N package with a through-hole mounting type and is qualified to AEC-Q101, making it a robust choice for automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 118A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.1mOhm @ 47A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 427W |
| Vgs(th) (Max) @ Id | 5.6V @ 23.5mA |
| Supplier Device Package | TO-247N |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2884 pF @ 500 V |
| Qualification | AEC-Q101 |
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